Pattern of x-ray scattering by thermal phonons in si

Z. Wu, Hawoong Hong, R. Aburano, P. Zschack, P. Jemian, J. Tischler, Haydn Chen, D. A. Luh, T. C. Chiang

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.

Original languageEnglish
Pages (from-to)3283-3286
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number5
DOIs
StatePublished - 1999

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