Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1999|