Pattern-coverage effect on light extraction efficiency of GaN LED on patterned-sapphire substrate

H. Y. Lin, Y. J. Chen, C. C. Chang, X. F. Li, S. C. Hsu, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

GaN-based LEDs were fabricated on patterned-sapphire substrates with various pyramidal-pattern coverage percentages (31-81). Three distinguish stages are observed in the behavior of the light out-put power against coverage percentage. By etching-pit density measurement, dislocation density is found to be independent with coverage percentage. The light extraction efficiency (LEE) should be the main mechanism for the enhancement in the light out-put power. LEE would be enhanced, when the pattern coverage is less than 39 or over 67. The light extraction efficiency remains similar, when the pattern coverage in between 39 ∼ 67.

Original languageEnglish
Pages (from-to)H72-H74
JournalElectrochemical and Solid-State Letters
Volume15
Issue number3
DOIs
StatePublished - 2012

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