Oxide roughness effect on tunneling current of MOS diodes

B. C. Hsu, K. F. Chen, C. C. Lai, S. W. Lee, C. W. Liu

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Two-dimensional (2-D) device simulation is used to investigate the tunneling current of metal ultra-thin-oxide silicon tunneling diodes with different oxide roughness. With the conformal nature of ultrathin oxide, the tunneling current density is simulated in both direct tunneling and Fowler-Nordheim (FN) tunneling regimes with different oxide roughness. The results show that oxide roughness dramatically enhances the tunneling current density and the 2-D electrical effect is responsible for this increment of tunneling current density. Furthermore, a set of devices with controlled oxide roughness is fabricated to verify the simulation results and our model qualitatively agrees with the experiment results.

Original languageEnglish
Pages (from-to)2204-2208
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume49
Issue number12
DOIs
StatePublished - Dec 2002

Keywords

  • Device simulation
  • Metal-oxide-silicon diode (MOS)
  • Roughness
  • Tunneling current

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