Oxidation behaviors of SiGe nanowire arrays fabricated by Au-assisted wet chemical etching

C. C. Lai, J. S. Lin, S. L. Cheng, S. W. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study investigates the oxidation behaviors of Si0.95Ge 0.05 nanowire arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching. After oxidation at 450°C for 8 hours, the diameter of SiGe nanowires can be reduced from 360 nm to 250 nm. Furthermore, the SiGe nanowires were transformed into the taper-like structures with a deep trench around the bottom regions after oxidation. We elucidate these phenomena in terms of the nonuniform oxidation rate caused by the nonuniform oxygen ambient and the Au-Si-Ge eutectic alloying. This work provides an effective approach to design the low-dimensional SiGe-based nanostructures for possible applications.

Original languageEnglish
Title of host publicationNanotechnology (General) - 216th ECS Meeting
PublisherElectrochemical Society Inc.
Pages87-93
Number of pages7
Edition24
ISBN (Electronic)9781566777971
ISBN (Print)9781566777971
DOIs
StatePublished - 2009

Publication series

NameECS Transactions
Number24
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

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