Origin of high field-effect mobility in solvent-vapor annealed anthradithiophene derivative

Chia Hsin Wang, Yung Chiuan Cheng, Jing Wen Su, Liang Jen Fan, Peng Yi Huang, Ming Chou Chen, Yaw Wen Yang

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Solvent-vapor annealing was used to increase the field-effect mobility of soluble triethylsilylethynyl anthradithiophene spin-coated on organosilane-terminated silicon dioxide, yielding a high value of 1.2 cm 2 V-1 s-1. The cause of improvement was investigated by atomic force microscopy, X-ray diffraction, and near-edge X-ray absorption fine structure spectroscopy. Vapor annealing exerts little effect on the molecular tilt and the crystallinity normal to the surface, but improves the film morphology significantly, yielding larger grains with perhaps better in-plane crystallinity.

Original languageEnglish
Pages (from-to)1947-1953
Number of pages7
JournalOrganic Electronics
Issue number12
StatePublished - Dec 2010


  • Functionalized anthradithiophene
  • Organic field effect transistor
  • Solvent-vapor annealing


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