Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering

Yu Pu Yang; Te Yun Lu; Song Ho Wang; Hsueh Er Chang; Peter J. Wang; Walter Lai; Yiin Kuen Fuh; Tomi T. Li

doi:10.1109/CSTIC49141.2020.9282480

Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering

Yu Pu Yang, Te Yun Lu, Song Ho Wang, Hsueh Er Chang, Peter J. Wang, Walter Lai, Yiin Kuen Fuh, Tomi T. Li

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, pulsed dc reactive sputtering of aluminum nitride (AlN) thin films was investigated. The aluminum nitride thin films were deposited on Si (100) using a reactive direct current (DC) unbalanced magnetron sputtering system. The DC reactive sputtering was used in sputtering the aluminum targets in a mixture of argon (Ar) and nitrogen (N2) plasma. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of Ar and N2. However, pulsed DC reactive sputtering of aluminum targets was carried out at total pressures with N2:Ar ratios from 7:30 to 45:15. In-situ optical emission spectrometry (OES) was applied to obtain the optimal deposition rate and the highest sputtering yield from the effects of flow nitrogen/argon (N2:Ar) ratio and pulse frequency on OES intensity. Thus, we have compared Fourier-transform infrared spectroscopy (FTIR) spectra and X-ray diffraction (XRD) patterns of AlN films deposited on Si (100) by DC reactive sputtering with an Al target in the mixture of Ar and N2. FTIR and XRD investigated the quality of the films and the preferred orientation.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2020, CSTIC 2020
Editors	Cor Claeys, Steve Liang, Qinghuang Lin, Ru Huang, Hanming Wu, Peilin Song, Kafai Lai, Ying Zhang, Beichao Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728165585
DOIs	https://doi.org/10.1109/CSTIC49141.2020.9282480
State	Published - 26 Jun 2020
Event	2020 China Semiconductor Technology International Conference, CSTIC 2020 - Shanghai, China Duration: 26 Jun 2020 → 17 Jul 2020

Publication series

Name	China Semiconductor Technology International Conference 2020, CSTIC 2020

Conference

Conference	2020 China Semiconductor Technology International Conference, CSTIC 2020
Country/Territory	China
City	Shanghai
Period	26/06/20 → 17/07/20

Keywords

Aluminum Nitride (AlN)
Fourier-transform infrared spectroscopy (FTIR)
Physical vapor deposition (PVD)
Power Generator
Pulsed DC
Sputtering
X-ray Diffraction(XRD)

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10.1109/CSTIC49141.2020.9282480

Cite this

Yang, Y. P., Lu, T. Y., Wang, S. H., Chang, H. E., Wang, P. J., Lai, W., Fuh, Y. K., & Li, T. T. (2020). Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering. In C. Claeys, S. Liang, Q. Lin, R. Huang, H. Wu, P. Song, K. Lai, Y. Zhang, B. Zhang, X. Qu, H.-L. Lung, & W. Yu (Eds.), China Semiconductor Technology International Conference 2020, CSTIC 2020 Article 9282480 (China Semiconductor Technology International Conference 2020, CSTIC 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSTIC49141.2020.9282480

Yang, Yu Pu ; Lu, Te Yun ; Wang, Song Ho et al. / Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering. China Semiconductor Technology International Conference 2020, CSTIC 2020. editor / Cor Claeys ; Steve Liang ; Qinghuang Lin ; Ru Huang ; Hanming Wu ; Peilin Song ; Kafai Lai ; Ying Zhang ; Beichao Zhang ; Xinping Qu ; Hsiang-Lan Lung ; Wenjian Yu. Institute of Electrical and Electronics Engineers Inc., 2020. (China Semiconductor Technology International Conference 2020, CSTIC 2020).

@inproceedings{8979e9caa96d480a999bd5c8f04c09bd,

title = "Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering",

abstract = "In this study, pulsed dc reactive sputtering of aluminum nitride (AlN) thin films was investigated. The aluminum nitride thin films were deposited on Si (100) using a reactive direct current (DC) unbalanced magnetron sputtering system. The DC reactive sputtering was used in sputtering the aluminum targets in a mixture of argon (Ar) and nitrogen (N2) plasma. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of Ar and N2. However, pulsed DC reactive sputtering of aluminum targets was carried out at total pressures with N2:Ar ratios from 7:30 to 45:15. In-situ optical emission spectrometry (OES) was applied to obtain the optimal deposition rate and the highest sputtering yield from the effects of flow nitrogen/argon (N2:Ar) ratio and pulse frequency on OES intensity. Thus, we have compared Fourier-transform infrared spectroscopy (FTIR) spectra and X-ray diffraction (XRD) patterns of AlN films deposited on Si (100) by DC reactive sputtering with an Al target in the mixture of Ar and N2. FTIR and XRD investigated the quality of the films and the preferred orientation.",

keywords = "Aluminum Nitride (AlN), Fourier-transform infrared spectroscopy (FTIR), Physical vapor deposition (PVD), Power Generator, Pulsed DC, Sputtering, X-ray Diffraction(XRD)",

author = "Yang, {Yu Pu} and Lu, {Te Yun} and Wang, {Song Ho} and Chang, {Hsueh Er} and Wang, {Peter J.} and Walter Lai and Fuh, {Yiin Kuen} and Li, {Tomi T.}",

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year = "2020",

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doi = "10.1109/CSTIC49141.2020.9282480",

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series = "China Semiconductor Technology International Conference 2020, CSTIC 2020",

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booktitle = "China Semiconductor Technology International Conference 2020, CSTIC 2020",

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Yang, YP, Lu, TY, Wang, SH, Chang, HE, Wang, PJ, Lai, W, Fuh, YK & Li, TT 2020, Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering. in C Claeys, S Liang, Q Lin, R Huang, H Wu, P Song, K Lai, Y Zhang, B Zhang, X Qu, H-L Lung & W Yu (eds), China Semiconductor Technology International Conference 2020, CSTIC 2020., 9282480, China Semiconductor Technology International Conference 2020, CSTIC 2020, Institute of Electrical and Electronics Engineers Inc., 2020 China Semiconductor Technology International Conference, CSTIC 2020, Shanghai, China, 26/06/20. https://doi.org/10.1109/CSTIC49141.2020.9282480

Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering. / Yang, Yu Pu; Lu, Te Yun; Wang, Song Ho et al.
China Semiconductor Technology International Conference 2020, CSTIC 2020. ed. / Cor Claeys; Steve Liang; Qinghuang Lin; Ru Huang; Hanming Wu; Peilin Song; Kafai Lai; Ying Zhang; Beichao Zhang; Xinping Qu; Hsiang-Lan Lung; Wenjian Yu. Institute of Electrical and Electronics Engineers Inc., 2020. 9282480 (China Semiconductor Technology International Conference 2020, CSTIC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering

AU - Yang, Yu Pu

AU - Lu, Te Yun

AU - Wang, Song Ho

AU - Chang, Hsueh Er

AU - Wang, Peter J.

AU - Lai, Walter

AU - Fuh, Yiin Kuen

AU - Li, Tomi T.

PY - 2020/6/26

Y1 - 2020/6/26

N2 - In this study, pulsed dc reactive sputtering of aluminum nitride (AlN) thin films was investigated. The aluminum nitride thin films were deposited on Si (100) using a reactive direct current (DC) unbalanced magnetron sputtering system. The DC reactive sputtering was used in sputtering the aluminum targets in a mixture of argon (Ar) and nitrogen (N2) plasma. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of Ar and N2. However, pulsed DC reactive sputtering of aluminum targets was carried out at total pressures with N2:Ar ratios from 7:30 to 45:15. In-situ optical emission spectrometry (OES) was applied to obtain the optimal deposition rate and the highest sputtering yield from the effects of flow nitrogen/argon (N2:Ar) ratio and pulse frequency on OES intensity. Thus, we have compared Fourier-transform infrared spectroscopy (FTIR) spectra and X-ray diffraction (XRD) patterns of AlN films deposited on Si (100) by DC reactive sputtering with an Al target in the mixture of Ar and N2. FTIR and XRD investigated the quality of the films and the preferred orientation.

AB - In this study, pulsed dc reactive sputtering of aluminum nitride (AlN) thin films was investigated. The aluminum nitride thin films were deposited on Si (100) using a reactive direct current (DC) unbalanced magnetron sputtering system. The DC reactive sputtering was used in sputtering the aluminum targets in a mixture of argon (Ar) and nitrogen (N2) plasma. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of Ar and N2. However, pulsed DC reactive sputtering of aluminum targets was carried out at total pressures with N2:Ar ratios from 7:30 to 45:15. In-situ optical emission spectrometry (OES) was applied to obtain the optimal deposition rate and the highest sputtering yield from the effects of flow nitrogen/argon (N2:Ar) ratio and pulse frequency on OES intensity. Thus, we have compared Fourier-transform infrared spectroscopy (FTIR) spectra and X-ray diffraction (XRD) patterns of AlN films deposited on Si (100) by DC reactive sputtering with an Al target in the mixture of Ar and N2. FTIR and XRD investigated the quality of the films and the preferred orientation.

KW - Aluminum Nitride (AlN)

KW - Fourier-transform infrared spectroscopy (FTIR)

KW - Physical vapor deposition (PVD)

KW - Power Generator

KW - Pulsed DC

KW - Sputtering

KW - X-ray Diffraction(XRD)

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U2 - 10.1109/CSTIC49141.2020.9282480

DO - 10.1109/CSTIC49141.2020.9282480

M3 - 會議論文篇章

AN - SCOPUS:85099241318

T3 - China Semiconductor Technology International Conference 2020, CSTIC 2020

BT - China Semiconductor Technology International Conference 2020, CSTIC 2020

A2 - Claeys, Cor

A2 - Liang, Steve

A2 - Lin, Qinghuang

A2 - Huang, Ru

A2 - Wu, Hanming

A2 - Song, Peilin

A2 - Lai, Kafai

A2 - Zhang, Ying

A2 - Zhang, Beichao

A2 - Qu, Xinping

A2 - Lung, Hsiang-Lan

A2 - Yu, Wenjian

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 China Semiconductor Technology International Conference, CSTIC 2020

Y2 - 26 June 2020 through 17 July 2020

ER -

Yang YP, Lu TY, Wang SH, Chang HE, Wang PJ, Lai W et al. Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering. In Claeys C, Liang S, Lin Q, Huang R, Wu H, Song P, Lai K, Zhang Y, Zhang B, Qu X, Lung HL, Yu W, editors, China Semiconductor Technology International Conference 2020, CSTIC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9282480. (China Semiconductor Technology International Conference 2020, CSTIC 2020). doi: 10.1109/CSTIC49141.2020.9282480

Optimization on deposition of aluminum nitride by pulsed direct current reactive magnetron sputtering

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Keywords

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