Optical-pumping spectra for InxGa1-xN/GaN multiple quantum well structures with indium content x>0.35

Chii Chang Chen, Hui Wen Chuang, Gou Chung Chi, Chang Cheng Chuo, Jen Inn Chyi

Research output: Contribution to journalConference articlepeer-review

Abstract

Photoluminescence (PL) measurement and optical pumping at 25 K were studied for high-indium-composition InGaN/GaN multiple quantum well (MQW) structures grown by low-pressure metalorganic chemical vapor deposition. The result show that thermal annealing can reduce the compositional fluctuation of indium content. The optical pumping spectra show 5 stimulated emission (SE) peaks. This phenomenon might be attributed to intersubband transition. The transition between quantized levels for each peak was precisely identified by solving the time-independent Schrodinger equation and finite-difference method. The ratio of conduction-band discontinuities to valence-band discontinuities of InGaN/GaN QW, ΔEC:ΔEV = 38:62, can be obtained.

Original languageEnglish
Pages (from-to)28-34
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
DOIs
StatePublished - 2000
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 26 Jul 200028 Jul 2000

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