Optical-pumping spectra for InxGa1-xN/GaN multiple quantum well structures with indium content x>0.35

Chii Chang Chen; Hui Wen Chuang; Gou Chung Chi; Chang Cheng Chuo; Jen Inn Chyi

doi:10.1117/12.392168

Optical-pumping spectra for In_xGa_1-xN/GaN multiple quantum well structures with indium content x>0.35

Chii Chang Chen, Hui Wen Chuang, Gou Chung Chi, Chang Cheng Chuo, Jen Inn Chyi

Research output: Contribution to journal › Conference article › peer-review

Abstract

Photoluminescence (PL) measurement and optical pumping at 25 K were studied for high-indium-composition InGaN/GaN multiple quantum well (MQW) structures grown by low-pressure metalorganic chemical vapor deposition. The result show that thermal annealing can reduce the compositional fluctuation of indium content. The optical pumping spectra show 5 stimulated emission (SE) peaks. This phenomenon might be attributed to intersubband transition. The transition between quantized levels for each peak was precisely identified by solving the time-independent Schrodinger equation and finite-difference method. The ratio of conduction-band discontinuities to valence-band discontinuities of InGaN/GaN QW, ΔE_C:ΔE_V = 38:62, can be obtained.

Original language	English
Pages (from-to)	28-34
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4078
DOIs	https://doi.org/10.1117/12.392168
State	Published - 2000
Event	Optoelectronic Materials and Devices II - Taipei, Taiwan Duration: 26 Jul 2000 → 28 Jul 2000

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title = "Optical-pumping spectra for InxGa1-xN/GaN multiple quantum well structures with indium content x>0.35",

abstract = "Photoluminescence (PL) measurement and optical pumping at 25 K were studied for high-indium-composition InGaN/GaN multiple quantum well (MQW) structures grown by low-pressure metalorganic chemical vapor deposition. The result show that thermal annealing can reduce the compositional fluctuation of indium content. The optical pumping spectra show 5 stimulated emission (SE) peaks. This phenomenon might be attributed to intersubband transition. The transition between quantized levels for each peak was precisely identified by solving the time-independent Schrodinger equation and finite-difference method. The ratio of conduction-band discontinuities to valence-band discontinuities of InGaN/GaN QW, ΔEC:ΔEV = 38:62, can be obtained.",

author = "Chen, {Chii Chang} and Chuang, {Hui Wen} and Chi, {Gou Chung} and Chuo, {Chang Cheng} and Chyi, {Jen Inn}",

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TY - JOUR

T1 - Optical-pumping spectra for InxGa1-xN/GaN multiple quantum well structures with indium content x>0.35

AU - Chen, Chii Chang

AU - Chuang, Hui Wen

AU - Chi, Gou Chung

AU - Chuo, Chang Cheng

AU - Chyi, Jen Inn

PY - 2000

Y1 - 2000

N2 - Photoluminescence (PL) measurement and optical pumping at 25 K were studied for high-indium-composition InGaN/GaN multiple quantum well (MQW) structures grown by low-pressure metalorganic chemical vapor deposition. The result show that thermal annealing can reduce the compositional fluctuation of indium content. The optical pumping spectra show 5 stimulated emission (SE) peaks. This phenomenon might be attributed to intersubband transition. The transition between quantized levels for each peak was precisely identified by solving the time-independent Schrodinger equation and finite-difference method. The ratio of conduction-band discontinuities to valence-band discontinuities of InGaN/GaN QW, ΔEC:ΔEV = 38:62, can be obtained.

AB - Photoluminescence (PL) measurement and optical pumping at 25 K were studied for high-indium-composition InGaN/GaN multiple quantum well (MQW) structures grown by low-pressure metalorganic chemical vapor deposition. The result show that thermal annealing can reduce the compositional fluctuation of indium content. The optical pumping spectra show 5 stimulated emission (SE) peaks. This phenomenon might be attributed to intersubband transition. The transition between quantized levels for each peak was precisely identified by solving the time-independent Schrodinger equation and finite-difference method. The ratio of conduction-band discontinuities to valence-band discontinuities of InGaN/GaN QW, ΔEC:ΔEV = 38:62, can be obtained.

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U2 - 10.1117/12.392168

DO - 10.1117/12.392168

M3 - 會議論文

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SN - 0277-786X

VL - 4078

SP - 28

EP - 34

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optoelectronic Materials and Devices II

Y2 - 26 July 2000 through 28 July 2000

ER -

Optical-pumping spectra for InxGa1-xN/GaN multiple quantum well structures with indium content x>0.35

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Optical-pumping spectra for In_xGa_1-xN/GaN multiple quantum well structures with indium content x>0.35