Optical properties of indium nitride nanorods prepared by chemical-beam epitaxy

Chih Kang Chao, Hsiang Szu Chang, Tzu Min Hsu, Chien Nan Hsiao, Chi Chung Kei, Shou Yi Kuo, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The optical properties of indium nitride nanorods grown by chemical-beam epitaxy are investigated by photoluminescence (PL) and Raman spectroscopy. The PL peaks show a blue shift from 0.69 to 0.79eV, which is associated with a decrease in the size of the nanorods from 40 to 5nm. Judging from the Raman spectra and transmission electron diffraction of these nanorods, it can be concluded that the quantum size effect is the most likely factor causing the PL shift, rather than the strain or Moss-Burstein effects.

Original languageEnglish
Article number053
Pages (from-to)3930-3932
Number of pages3
JournalNanotechnology
Volume17
Issue number15
DOIs
StatePublished - 14 Aug 2006

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