Abstract
The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 μm can thus be obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 272-275 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 2004 |
| Event | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 May 2004 → 4 Jun 2004 |