The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 μm can thus be obtained.
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 2004|
|Event||2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan|
Duration: 31 May 2004 → 4 Jun 2004