Abstract
We have presented our study on optical models for simulating the light distribution of an LED and for calculating light extraction efficiency of an LED chip. In the former, we have precisely predicted the light distribution of an LED by a lens. In the latter, we has proposed to introduce a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 73% in light extraction efficiency.
Original language | English |
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Pages (from-to) | 100-106 |
Number of pages | 7 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5187 |
State | Published - 2004 |
Event | Third International Conference on Solid State Lighting - San Diego, CA, United States Duration: 5 Aug 2003 → 7 Aug 2003 |
Keywords
- GaN
- Inverse pyramid
- Light extraction efficiency
- Optical model
- Sharpening structure