Optical characterization of isoelectronic ZnSe1-xOx semiconductors

Y. C. Lin, H. L. Chung, J. T. Ku, C. Y. Chen, K. F. Chien, W. C. Fan, L. Lee, J. I. Chyi, W. C. Chou, W. H. Chang, W. K. Chen

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We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in O concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent β.

Original languageEnglish
Pages (from-to)122-126
Number of pages5
JournalJournal of Crystal Growth
Issue number1
StatePublished - 15 May 2011


  • Alloys
  • Molecular beam epitaxy
  • Oxides
  • Semiconducting IIVI materials
  • Semiconducting ternary compounds
  • Zinc compounds


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