Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures

Shih Wei Feng; Yen Sheng Lin; Chi Chih Liao; Kung Jeng Ma; C. C. Yang; Chang Cheng Chou; Chia Ming Lee; Jen Inn Chyi

Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures

Shih Wei Feng, Yen Sheng Lin, Chi Chih Liao, Kung Jeng Ma, C. C. Yang, Chang Cheng Chou, Chia Ming Lee, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.

Original language	English
Pages	11
Number of pages	1
State	Published - 2000
Event	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: 10 Sep 2000 → 15 Sep 2000

Conference

Conference	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
City	Nice, France
Period	10/09/00 → 15/09/00

Cite this

@conference{b65d4c887bc24062b36c9faefde2bfca,

title = "Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures",

abstract = "Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.",

author = "Feng, {Shih Wei} and Lin, {Yen Sheng} and Liao, {Chi Chih} and Ma, {Kung Jeng} and Yang, {C. C.} and Chou, {Chang Cheng} and Lee, {Chia Ming} and Chyi, {Jen Inn}",

year = "2000",

language = "???core.languages.en_GB???",

pages = "11",

note = "2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) ; Conference date: 10-09-2000 Through 15-09-2000",

}

TY - CONF

T1 - Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures

AU - Feng, Shih Wei

AU - Lin, Yen Sheng

AU - Liao, Chi Chih

AU - Ma, Kung Jeng

AU - Yang, C. C.

AU - Chou, Chang Cheng

AU - Lee, Chia Ming

AU - Chyi, Jen Inn

PY - 2000

Y1 - 2000

N2 - Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.

AB - Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.

UR - http://www.scopus.com/inward/record.url?scp=0033715811&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0033715811

SP - 11

T2 - 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)

Y2 - 10 September 2000 through 15 September 2000

ER -

Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures

Abstract

Conference

Fingerprint

Cite this