Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.
|Number of pages||1|
|State||Published - 2000|
|Event||2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France|
Duration: 10 Sep 2000 → 15 Sep 2000
|Conference||2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)|
|Period||10/09/00 → 15/09/00|