A single - sided silicon detector with AC-coupling capacitors and polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual Si02 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection, free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about lOOnA/cm2 at 100 Volts. The breakdown voltage was within 160-200Volts for the ONO layer. In which we didn't find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993, an average S/N ratio of 30 and a best spatial resolution of 3.5±0.5um with an efficiency close to 100% were obtained for the ONO-SMD.
|State||Published - 1994|
|Event||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
Duration: 12 Jul 1994 → 15 Jul 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|Period||12/07/94 → 15/07/94|