ONO SMD - A silicon microstrip detector with ONO A-C coupled capacitor

Wen Chin Tsay; Jyh Wong Hong; A. Chen; Willis T. Lin; Hsien Ten Ting; Song Tsang Chiang; Ching Lan Yen

doi:10.1109/EDMS.1994.771226

ONO SMD - A silicon microstrip detector with ONO A-C coupled capacitor

Wen Chin Tsay, Jyh Wong Hong, A. Chen, Willis T. Lin, Hsien Ten Ting, Song Tsang Chiang, Ching Lan Yen

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

A single - sided silicon detector with AC-coupling capacitors and polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual Si02 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection, free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about lOOnA/cm² at 100 Volts. The breakdown voltage was within 160-200Volts for the ONO layer. In which we didn't find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993, an average S/N ratio of 30 and a best spatial resolution of 3.5±0.5um with an efficiency close to 100% were obtained for the ONO-SMD.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771226
State	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

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10.1109/EDMS.1994.771226

Cite this

@conference{4e06f809600546d196452ff37a452073,

title = "ONO SMD - A silicon microstrip detector with ONO A-C coupled capacitor",

abstract = "A single - sided silicon detector with AC-coupling capacitors and polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual Si02 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection, free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about lOOnA/cm2 at 100 Volts. The breakdown voltage was within 160-200Volts for the ONO layer. In which we didn't find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993, an average S/N ratio of 30 and a best spatial resolution of 3.5±0.5um with an efficiency close to 100% were obtained for the ONO-SMD.",

author = "Tsay, {Wen Chin} and Hong, {Jyh Wong} and A. Chen and Lin, {Willis T.} and Ting, {Hsien Ten} and Chiang, {Song Tsang} and Yen, {Ching Lan}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771226",

language = "???core.languages.en_GB???",

}

TY - CONF

T1 - ONO SMD - A silicon microstrip detector with ONO A-C coupled capacitor

AU - Tsay, Wen Chin

AU - Hong, Jyh Wong

AU - Chen, A.

AU - Lin, Willis T.

AU - Ting, Hsien Ten

AU - Chiang, Song Tsang

AU - Yen, Ching Lan

PY - 1994

Y1 - 1994

N2 - A single - sided silicon detector with AC-coupling capacitors and polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual Si02 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection, free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about lOOnA/cm2 at 100 Volts. The breakdown voltage was within 160-200Volts for the ONO layer. In which we didn't find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993, an average S/N ratio of 30 and a best spatial resolution of 3.5±0.5um with an efficiency close to 100% were obtained for the ONO-SMD.

AB - A single - sided silicon detector with AC-coupling capacitors and polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual Si02 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection, free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about lOOnA/cm2 at 100 Volts. The breakdown voltage was within 160-200Volts for the ONO layer. In which we didn't find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993, an average S/N ratio of 30 and a best spatial resolution of 3.5±0.5um with an efficiency close to 100% were obtained for the ONO-SMD.

UR - http://www.scopus.com/inward/record.url?scp=85063586652&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771226

DO - 10.1109/EDMS.1994.771226

M3 - 會議論文

AN - SCOPUS:85063586652

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

ONO SMD - A silicon microstrip detector with ONO A-C coupled capacitor

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