On the structure and characterization of Al, Sc-co-doped ZnO-films varying with 0-2.37 wt.% Sc contents

Jing Chie Lin, Kun Cheng Peng, Tai You Yeh, Sheng Long Lee

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Thin films of Al, Sc-co-doped ZnO varying with Sc-contents were sputtered on the glass substrate. X-ray diffraction (XRD) of the films revealed wurtzite crystals that were confirmed through the analysis of high resolution transmission electron microscopy (HRTEM). With increasing the Sc-content from 0 to 2.37 wt.% in the films, the optical energy band gap (Eg) was estimated to decrease from 3.25 to 3.20 eV, and the electrical resistivity (Ω cm) decreased from 3.8 × 10- 3 to 1.3 × 10- 3. The decrease in resistivity may be ascribed to electrons tunneling through the horizontal stacking faults induced by Sc-dopants in the films.

Original languageEnglish
Pages (from-to)4715-4719
Number of pages5
JournalThin Solid Films
Volume517
Issue number17
DOIs
StatePublished - 1 Jul 2009

Keywords

  • Al
  • Al-doped film
  • Columnar grains
  • Conducting film
  • Red-shifted
  • Sc co-doped
  • Transparent
  • ZnO Electrical resistivity

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