On the structure and characterization of Al, Sc-co-doped ZnO-films varying with 0-2.37 wt.% Sc contents

Jing Chie Lin; Kun Cheng Peng; Tai You Yeh; Sheng Long Lee

doi:10.1016/j.tsf.2009.03.022

On the structure and characterization of Al, Sc-co-doped ZnO-films varying with 0-2.37 wt.% Sc contents

Jing Chie Lin, Kun Cheng Peng, Tai You Yeh, Sheng Long Lee

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Thin films of Al, Sc-co-doped ZnO varying with Sc-contents were sputtered on the glass substrate. X-ray diffraction (XRD) of the films revealed wurtzite crystals that were confirmed through the analysis of high resolution transmission electron microscopy (HRTEM). With increasing the Sc-content from 0 to 2.37 wt.% in the films, the optical energy band gap (Eg) was estimated to decrease from 3.25 to 3.20 eV, and the electrical resistivity (Ω cm) decreased from 3.8 × 10^{- 3} to 1.3 × 10^{- 3}. The decrease in resistivity may be ascribed to electrons tunneling through the horizontal stacking faults induced by Sc-dopants in the films.

Original language	English
Pages (from-to)	4715-4719
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2009.03.022
State	Published - 1 Jul 2009

Keywords

Al
Al-doped film
Columnar grains
Conducting film
Red-shifted
Sc co-doped
Transparent
ZnO Electrical resistivity

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10.1016/j.tsf.2009.03.022

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title = "On the structure and characterization of Al, Sc-co-doped ZnO-films varying with 0-2.37 wt.% Sc contents",

abstract = "Thin films of Al, Sc-co-doped ZnO varying with Sc-contents were sputtered on the glass substrate. X-ray diffraction (XRD) of the films revealed wurtzite crystals that were confirmed through the analysis of high resolution transmission electron microscopy (HRTEM). With increasing the Sc-content from 0 to 2.37 wt.% in the films, the optical energy band gap (Eg) was estimated to decrease from 3.25 to 3.20 eV, and the electrical resistivity (Ω cm) decreased from 3.8 × 10- 3 to 1.3 × 10- 3. The decrease in resistivity may be ascribed to electrons tunneling through the horizontal stacking faults induced by Sc-dopants in the films.",

keywords = "Al, Al-doped film, Columnar grains, Conducting film, Red-shifted, Sc co-doped, Transparent, ZnO Electrical resistivity",

author = "Lin, {Jing Chie} and Peng, {Kun Cheng} and Yeh, {Tai You} and Lee, {Sheng Long}",

note = "Funding Information: The authors highly appreciate the financial support of National Science Council, Taiwan, under the contract of NSC94-2216-E-008-008.",

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doi = "10.1016/j.tsf.2009.03.022",

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T1 - On the structure and characterization of Al, Sc-co-doped ZnO-films varying with 0-2.37 wt.% Sc contents

AU - Lin, Jing Chie

AU - Peng, Kun Cheng

AU - Yeh, Tai You

AU - Lee, Sheng Long

N1 - Funding Information: The authors highly appreciate the financial support of National Science Council, Taiwan, under the contract of NSC94-2216-E-008-008.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Thin films of Al, Sc-co-doped ZnO varying with Sc-contents were sputtered on the glass substrate. X-ray diffraction (XRD) of the films revealed wurtzite crystals that were confirmed through the analysis of high resolution transmission electron microscopy (HRTEM). With increasing the Sc-content from 0 to 2.37 wt.% in the films, the optical energy band gap (Eg) was estimated to decrease from 3.25 to 3.20 eV, and the electrical resistivity (Ω cm) decreased from 3.8 × 10- 3 to 1.3 × 10- 3. The decrease in resistivity may be ascribed to electrons tunneling through the horizontal stacking faults induced by Sc-dopants in the films.

AB - Thin films of Al, Sc-co-doped ZnO varying with Sc-contents were sputtered on the glass substrate. X-ray diffraction (XRD) of the films revealed wurtzite crystals that were confirmed through the analysis of high resolution transmission electron microscopy (HRTEM). With increasing the Sc-content from 0 to 2.37 wt.% in the films, the optical energy band gap (Eg) was estimated to decrease from 3.25 to 3.20 eV, and the electrical resistivity (Ω cm) decreased from 3.8 × 10- 3 to 1.3 × 10- 3. The decrease in resistivity may be ascribed to electrons tunneling through the horizontal stacking faults induced by Sc-dopants in the films.

KW - Al

KW - Al-doped film

KW - Columnar grains

KW - Conducting film

KW - Red-shifted

KW - Sc co-doped

KW - Transparent

KW - ZnO Electrical resistivity

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U2 - 10.1016/j.tsf.2009.03.022

DO - 10.1016/j.tsf.2009.03.022

M3 - 期刊論文

AN - SCOPUS:65649095188

SN - 0040-6090

VL - 517

SP - 4715

EP - 4719

JO - Thin Solid Films

JF - Thin Solid Films

IS - 17

ER -

On the structure and characterization of Al, Sc-co-doped ZnO-films varying with 0-2.37 wt.% Sc contents

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Keywords

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