On the microstructure and interfacial structure of InSb layers grown on GaAs(100) by molecular beam epitaxy

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Transmission electron microscopy 66%
• Lattice mismatch 57%
• Dislocations (crystals) 51%
• Epitaxial films 49%
• Defect density 46%
• Substrates 45%
• Microstructure 43%
• Electron beams 38%
• Defects 22%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Interfacial Structure 83%
• Misfit Dislocation 59%
• Strain 45%
• Microstructure 43%
• Transmission Electron Microscopy 42%
• Electron Beam 35%
• Liquid Film 31%
• Purity 16%

Physics & Astronomy

• molecular beam epitaxy 54%
• microstructure 37%
• relieving 19%
• transmission electron microscopy 16%
• defects 14%
• inclusions 10%
• electron beams 9%
• damage 9%