Observation of Ni                         3+                          acceptor in P-type Ni(P):SnO                         2

Po Ming Lee; Yen Ju Wu; Chih Yi Hsieh; Ching Han Liao; Yen Shuo Liu; Cheng Yi Liu

doi:10.1016/j.apsusc.2015.02.060

Observation of Ni ³⁺ acceptor in P-type Ni(P):SnO ₂

Po Ming Lee
, Yen Ju Wu
, Chih Yi Hsieh
, Ching Han Liao
, Yen Shuo Liu
, Cheng Yi Liu

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Ni dopants typically exist as Ni ²⁺ oxidation state in metal oxides. We report that as Ni is co-doped with P in Ni(P):SnO ₂ , P promotes Ni ²⁺ into Ni ³⁺ , which acts as acceptor and coverts n-type SnO ₂ to p-type conduction. Significant hole concentration (4.5 × 10 ¹⁸ cm ^-3 ) of p-type Ni(P):SnO ₂ can be obtained. The chemical state of Ni ³⁺ in Ni(P):SnO ₂ is verified by ultra-violet and x-ray photoelectron spectroscopy. With the developed p-Ni(P):SnO ₂ , transparent p-Ni(P):SnO ₂ /i-SnO ₂ /n-ITO p-i-n structure was fabricated and characterized: low leakage-current (8.41 × 10 ^-5 A at -5 V), turn-on voltage (4.68 eV), good transmittance (85%), and small ideality-factor (1.73).

Original language	English
Pages (from-to)	33-37
Number of pages	5
Journal	Applied Surface Science
Volume	337
DOIs	https://doi.org/10.1016/j.apsusc.2015.02.060
State	Published - 15 May 2015

Keywords

Nickel
P-type
Phosphorus
Tin oxide
Transparent conductive film

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@article{dd728484bf554b6e9dd902da6dc2eeef,

title = " Observation of Ni 3+ acceptor in P-type Ni(P):SnO 2 ",

abstract = " Ni dopants typically exist as Ni 2+ oxidation state in metal oxides. We report that as Ni is co-doped with P in Ni(P):SnO 2 , P promotes Ni 2+ into Ni 3+ , which acts as acceptor and coverts n-type SnO 2 to p-type conduction. Significant hole concentration (4.5 × 10 18 cm -3 ) of p-type Ni(P):SnO 2 can be obtained. The chemical state of Ni 3+ in Ni(P):SnO 2 is verified by ultra-violet and x-ray photoelectron spectroscopy. With the developed p-Ni(P):SnO 2 , transparent p-Ni(P):SnO 2 /i-SnO 2 /n-ITO p-i-n structure was fabricated and characterized: low leakage-current (8.41 × 10 -5 A at -5 V), turn-on voltage (4.68 eV), good transmittance (85\%), and small ideality-factor (1.73). ",

keywords = "Nickel, P-type, Phosphorus, Tin oxide, Transparent conductive film",

author = "Lee, \{Po Ming\} and Wu, \{Yen Ju\} and Hsieh, \{Chih Yi\} and Liao, \{Ching Han\} and Liu, \{Yen Shuo\} and Liu, \{Cheng Yi\}",

year = "2015",

month = may,

day = "15",

doi = "10.1016/j.apsusc.2015.02.060",

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volume = "337",

pages = "33--37",

journal = "Applied Surface Science",

issn = "0169-4332",

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TY - JOUR

T1 - Observation of Ni 3+ acceptor in P-type Ni(P):SnO 2

AU - Lee, Po Ming

AU - Wu, Yen Ju

AU - Hsieh, Chih Yi

AU - Liao, Ching Han

AU - Liu, Yen Shuo

AU - Liu, Cheng Yi

PY - 2015/5/15

Y1 - 2015/5/15

N2 - Ni dopants typically exist as Ni 2+ oxidation state in metal oxides. We report that as Ni is co-doped with P in Ni(P):SnO 2 , P promotes Ni 2+ into Ni 3+ , which acts as acceptor and coverts n-type SnO 2 to p-type conduction. Significant hole concentration (4.5 × 10 18 cm -3 ) of p-type Ni(P):SnO 2 can be obtained. The chemical state of Ni 3+ in Ni(P):SnO 2 is verified by ultra-violet and x-ray photoelectron spectroscopy. With the developed p-Ni(P):SnO 2 , transparent p-Ni(P):SnO 2 /i-SnO 2 /n-ITO p-i-n structure was fabricated and characterized: low leakage-current (8.41 × 10 -5 A at -5 V), turn-on voltage (4.68 eV), good transmittance (85%), and small ideality-factor (1.73).

AB - Ni dopants typically exist as Ni 2+ oxidation state in metal oxides. We report that as Ni is co-doped with P in Ni(P):SnO 2 , P promotes Ni 2+ into Ni 3+ , which acts as acceptor and coverts n-type SnO 2 to p-type conduction. Significant hole concentration (4.5 × 10 18 cm -3 ) of p-type Ni(P):SnO 2 can be obtained. The chemical state of Ni 3+ in Ni(P):SnO 2 is verified by ultra-violet and x-ray photoelectron spectroscopy. With the developed p-Ni(P):SnO 2 , transparent p-Ni(P):SnO 2 /i-SnO 2 /n-ITO p-i-n structure was fabricated and characterized: low leakage-current (8.41 × 10 -5 A at -5 V), turn-on voltage (4.68 eV), good transmittance (85%), and small ideality-factor (1.73).

KW - Nickel

KW - P-type

KW - Phosphorus

KW - Tin oxide

KW - Transparent conductive film

UR - https://www.scopus.com/pages/publications/84925363187

U2 - 10.1016/j.apsusc.2015.02.060

DO - 10.1016/j.apsusc.2015.02.060

M3 - 期刊論文

AN - SCOPUS:84925363187

SN - 0169-4332

VL - 337

SP - 33

EP - 37

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Observation of Ni 3+ acceptor in P-type Ni(P):SnO 2

Abstract

Keywords

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Observation of Ni ³⁺ acceptor in P-type Ni(P):SnO ₂