Numerical study of the thermal and flow fields during the growth process of 800 kg and 1600 kg silicon feedstock

Thi Hoai Thu Nguyen, Jyh Chen Chen, Chieh Hu, Chun Hung Chen, Yen Hao Huang, Huang Wei Lin, Andy Yu, Bruce Hsu, Michael Yang, Ray Yang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Two-dimensional (2D) transient numerical simulations are performed to investigate the evolution of the thermal and flow fields during the growth of multi-crystalline silicon ingots with two different silicon feedstock capacities, 800 kg and 1600 kg. The simulation results show that there are differences in the structure of the melt flow. In the 1600 kg case, there is a reduction in the concavity of the crystal-melt interface near the crucible wall and an increase in the convexity of the interface at higher solidification fractions. Moreover, the Voronkov ratios, which are indicative of the formation of defects, become lower during the solidification process.

Original languageEnglish
Article number74
JournalCrystals
Volume7
Issue number3
DOIs
StatePublished - Mar 2017

Keywords

  • Directional solidification
  • Multi-crystalline silicon
  • Solar cells

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