Numerical simulation of thermal and mass transport during Czochralski crystal growth of sapphire

Chung Wei Lu, Jyh Chen Chen

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The thermal and flow transport in an inductively heated Czochralski crystal growth furnace during a crystal growth process is investigated numerically. The temperature and flow fields inside the furnace, coupled with the heat generation in the iridium crucible induced by the electromagnetic field generated by the RF coil, are computed. The results indicate that for an RF coil fixed in position during the growth process, although the maximum value of the magnetic, temperature and velocity fields decrease, the convexity of the crystal-melt interface increases for longer crystal growth lengths. The convexity of the crystal-melt interface and the power consumption can be reduced by adjusting the relative position between the crucible and the induction coil during growth.

Original languageEnglish
Pages (from-to)371-379
Number of pages9
JournalCrystal Research and Technology
Volume45
Issue number4
DOIs
StatePublished - Apr 2010

Keywords

  • Crystal growth
  • Czochralski method
  • Numerical simulation
  • Sapphire

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