Numerical simulation of heat and mass transfer during Czochralski silicon crystal growth under the application of crystal-crucible counter- and iso-rotations

Keyphrases

• Convection 100%
• Numerical Simulation 100%
• Crystal-melt Interface 100%
• Czochralski Silicon 100%
• Silicon Crystal Growth 100%
• Rotation Rate 100%
• Heat Mass Transfer 100%
• Heat Transfer Model 100%
• Oxygen Atom 50%
• Flow Pattern 50%
• Oxygen Concentration 50%
• Oxygen Transport 50%
• Crystal Growth 50%
• Silicon Melt 50%
• Growth Parameters 50%
• Diffusion Process 50%
• Radial Distribution 50%
• Melt Velocity 50%
• Counter-rotation 50%
• Melt Flow 50%
• Flow Transition 50%
• Flow Heat Transfer 50%
• Crystal Rotation 50%
• Defect Transitions 50%
• Rotating Condition 50%

Engineering

• Iso 100%
• Rotation Rate 33%
• Simulation Result 16%
• Rotational 16%
• Oxygen Concentration 16%
• Flow Pattern 16%
• Diffusion Process 16%
• Growth Parameter 16%
• Melt Flow 16%
• Radial Distribution 16%
• Oxygen Atom 16%

Material Science

• Silicon 100%
• Crystal Growth 100%