Numerical simulation of heat and fluid flows for sapphire single crystal growth by the Kyropoulos method

Chun Hung Chen, Jyh Chen Chen, Chung Wei Lu, Che Ming Liu

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Numerical computation has been performed to investigate temperature and velocity distributions for different stages of the Kyropoulos sapphire single crystal-growth process. The finite-element method is employed to solve the governing equations with proper boundary conditions. In the power history considered here, a vortex appears in the melt during growth, and its strength decreases as the input power is reduced. Isotherms in the melt are distorted by flow motion. The crystalmelt interface is always convex towards the melt and in early stages the convexity increases as the input power decreases. When the crystalmelt interface is close to the bottom of the crucible, this interface is flat near the apex because of reduction in growth rate near the upper region caused by input heat from the bottom of the crucible. Therefore, convexity of the crystalmelt interface decreases the input power decreases. The crystal shape predicted by the present simulation is similar to that of crystals grown in the industry.

Original languageEnglish
Pages (from-to)162-167
Number of pages6
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
StatePublished - 1 Mar 2011

Keywords

  • A1. Computer simulation
  • A1. Convection
  • A1. Heat transfer
  • A2. Single crystal growth
  • B1. Sapphire

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