@inproceedings{bb38c623c6af4caca6e7042d522298b0,
title = "Numerical analysis for thermal field of susceptor in MOCVD reactor",
abstract = "A MOCVD process requires not only high heating efficiency, but also good temperature uniformity on susceptor surface. The most common material of susceptor is graphite, but the heating lifetime is very short. Instead, this work uses the SiC as susceptor material. It enhances both the lifetime and thermal conductivity. In the meantime, we also change the shape and structure of susceptor to improve the temperature uniformity on the surface. In addition, the gas flow rate and wall temperature will affect the temperature uniformity thus the analysis of thermal flow field is also included. By using above methods, the temperature uniformity of susceptor can improve about 45%.",
keywords = "MOCVD, SiC susceptor, temperature uniformity",
author = "Ho, {Kuo Hung} and Hu, {Chih Kai} and Li, {Tomi T.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 China Semiconductor Technology International Conference, CSTIC 2015 ; Conference date: 15-03-2015 Through 16-03-2015",
year = "2015",
month = jul,
day = "8",
doi = "10.1109/CSTIC.2015.7153470",
language = "???core.languages.en_GB???",
series = "China Semiconductor Technology International Conference 2015, CSTIC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Qinghuang Lin and Beichao Zhang and Larry Chen and Hsiang-Lan Lung and Kafei Lai and Dong Chen and Ying Zhang and David Huang and Kuochun Wu and Cor Claeys and Steve Liang and Ru Huang and Peilin Song and Hanming Wu and Qi Wang",
booktitle = "China Semiconductor Technology International Conference 2015, CSTIC 2015",
}