Numerical analysis for thermal field of susceptor in MOCVD reactor

Kuo Hung Ho, Chih Kai Hu, Tomi T. Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A MOCVD process requires not only high heating efficiency, but also good temperature uniformity on susceptor surface. The most common material of susceptor is graphite, but the heating lifetime is very short. Instead, this work uses the SiC as susceptor material. It enhances both the lifetime and thermal conductivity. In the meantime, we also change the shape and structure of susceptor to improve the temperature uniformity on the surface. In addition, the gas flow rate and wall temperature will affect the temperature uniformity thus the analysis of thermal flow field is also included. By using above methods, the temperature uniformity of susceptor can improve about 45%.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2015, CSTIC 2015
EditorsQinghuang Lin, Beichao Zhang, Larry Chen, Hsiang-Lan Lung, Kafei Lai, Dong Chen, Ying Zhang, David Huang, Kuochun Wu, Cor Claeys, Steve Liang, Ru Huang, Peilin Song, Hanming Wu, Qi Wang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479972418
DOIs
StatePublished - 8 Jul 2015
Event2015 China Semiconductor Technology International Conference, CSTIC 2015 - Shanghai, China
Duration: 15 Mar 201516 Mar 2015

Publication series

NameChina Semiconductor Technology International Conference 2015, CSTIC 2015

Conference

Conference2015 China Semiconductor Technology International Conference, CSTIC 2015
Country/TerritoryChina
CityShanghai
Period15/03/1516/03/15

Keywords

  • MOCVD
  • SiC susceptor
  • temperature uniformity

Fingerprint

Dive into the research topics of 'Numerical analysis for thermal field of susceptor in MOCVD reactor'. Together they form a unique fingerprint.

Cite this