N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development

Wei Zhi He, Heng Kuang Lin, Pei Chin Chiu, Jen Inn Chyi, Chih Hsin Ko, Ta Ming Kuan, Meng Kuei Hsieh, Wen Chin Lee, Clement H. Wann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development are presented. Highly doped N+-InGaAs cap layers are used to decrease the parasitic resistances in contact and access regions. As-grown modulation-doped epitaxy materials exhibit a Hall mobility of 14,200 cm2/V s and a sheet density of 6.15 × 1012 cm -2, while a mobility of 14,600 cm2/V s and a sheet density of 5.61×1012 cm-2 are shown after removal of the N+-InGaAs cap. Benefiting the energy band lowering using the highly doped cap layers, a low contact resistance of 0.06 Ω-mm is achieved. DC performances of IDSS=862mA/mm and gm,peak=927mS/mm and RF performances of fT=24GHz and fmax=51GHz are demonstrated in a 2.1μm-gate-length device. An fT-Lg product is as high as 51 GH-μm.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages329-332
Number of pages4
DOIs
StatePublished - 2010
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: 31 May 20104 Jun 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Country/TerritoryJapan
CityKagawa
Period31/05/104/06/10

Keywords

  • HFET
  • InAs
  • Recessed gate

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