N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator

Hsien Chin Chiu, Chia Hsuan Wu, Ji Fan Chi, J. I. Chyi, G. Y. Lee

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


A normally-off InAlN/GaN MIS-HEMT with HfZrO2 gate insulator was realized and investigated. By using N2O plasma treatment beneath the gate region, 13 nm InAlN Schottky layer was oxidized to AlONx + 4 nm InAlN Schottky layer. The strong polarization induced carriers in traditional InAlN/GaN 2 DEG quantum well was reduced for enhancement-mode operation. High-k thin film HfZrO2 was used for gate insulator of E-mode device to further suppress gate leakage current and enhance device gate operation range. The maximum drain current of E-mode InAlN/GaN MIS-HEMT was 498 mA/mm and this value was higher than previous published InAlN/GaN E-mode devices. The measurement results of low-frequency noise also concluded that the low frequency noise is attributed to the mobility fluctuation of the channel and N2O plasma treatment did not increase fluctuation center of gate electrode.

Original languageEnglish
Pages (from-to)48-51
Number of pages4
JournalMicroelectronics Reliability
Issue number1
StatePublished - 1 Jan 2015


  • E-mode
  • GaN
  • HEMTs
  • HfZrO
  • InAlN


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