Novel semiconductors based on functionalized Benzo[d,d']thieno[3,2- b;4,5-b']dithiophenes (BTDTs) and the effects of thin film growth conditions on organic field effect transistor performance

Jangdae Youn, Ming Chou Chen, You Jhih Liang, Hui Huang, Rocio Ponce Ortiz, Choongik Kim, Charlotte Stern, Tarng Shiang Hu, Liang Hsiang Chen, Jing Yi Yan, Antonio Facchetti, Tobin J. Marks

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (PBTDT), benzothiophenyl (BT-BTDT) were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)- treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm2V-1s-1 and Ion/I off greater than 108.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors IX
DOIs
StatePublished - 2010
EventOrganic Field-Effect Transistors IX - San Diego, CA, United States
Duration: 2 Aug 20104 Aug 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7778
ISSN (Print)0277-786X

Conference

ConferenceOrganic Field-Effect Transistors IX
Country/TerritoryUnited States
CitySan Diego, CA
Period2/08/104/08/10

Keywords

  • Benzothienodithiophene
  • Deposition flux rate
  • Silane self-assembly
  • Substrate temperature

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