Novel Guard Ring Structure formed by Self-align Trench Implant in SiC MOSFET

Keyphrases

• Self-aligned 100%
• Guard Ring 100%
• Guard-ring Structure 100%
• SiC MOSFET 100%
• Breakdown Voltage 66%
• Thermal Conductivity 33%
• Chip Area 33%
• Process Flow 33%
• High Breakdown Field 33%
• High Power Applications 33%
• Conventional Design 33%
• Photomask 33%
• Wide Band Gap Semiconductors 33%
• Ring Design 33%
• Planar MOSFET 33%
• Trench Etching 33%
• Trench MOSFET 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Breakdown Voltage 50%
• Implant 50%
• Thermal Conductivity 25%
• Chip Area 25%
• Process Flow 25%
• Wide Bandgap Semiconductor 25%
• Electric Field 25%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Thermal Conductivity 25%
• Wide Bandgap Semiconductor 25%