Novel Concept of the Transistor Variation Directed Toward the Circuit Implementation of Physical Unclonable Function (PUF) and True-random-number Generator (TRNG)

Y. Xiao, E. R. Hsieh, Steve S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, Osbert Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

For the first time, we use a unique feature of S/D variation of FinFET to realize PUF (Physical unclonable function) and TRNG (True random number generator). With the scaling of transistors, S/D variation becomes significant. This provides an opportunity to use the mismatch of the S/D resistances for the design of PUF. Method has been developed to first rule out those less significant factors of variation. Then, a PUF is developed based on the dominant S/D variation. In terms of the security, this PUF exhibits ideal un-biased normal distribution of hamming distance, and narrow distribution of hamming weight in the range of 45%~55%. The unstable bit rates are also very low (1.17%) under room temperature and 3.12% under 150°C, benchmarked on a 256 bits array. Meanwhile, as a result of the defect (in the form of traps) at the drain/substrate junction, RTN behavior was observed from the current measured between drain/source and substrate, named Ib-RTN. It provides us a way to implement a TRNG This TRNG passed NIST test up to 9 items. Overall, the S/D mismatch PUF and Ib-RTN TRNG demonstrated great potential to meet the requirements of the IoT security application.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
DOIs
StatePublished - Dec 2019
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 7 Dec 201911 Dec 2019

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/TerritoryUnited States
CitySan Francisco
Period7/12/1911/12/19

Fingerprint

Dive into the research topics of 'Novel Concept of the Transistor Variation Directed Toward the Circuit Implementation of Physical Unclonable Function (PUF) and True-random-number Generator (TRNG)'. Together they form a unique fingerprint.

Cite this