Novel concept of hardware security in using gate-switching FinFET nonvolatile memory to implement true-random-number generator

W. Y. Yang, B. Y. Chen, C. C. Chuang, E. R. Hsieh, K. S. Li, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For the first time, we use a gate-switching resistance memory to implement the TRNG (True random number generator). First, a resistance memory was built on a FinFET platform, named RG-FinFET(resistive-gate) RRAM which was simply an MIM(metal-insulator-metal) integrated on top of the FinFET gate. It performed as a novolatile memory (NVM) which used resistance switching to distinguish 0 and 1 states through the drain current of the FinFET. The experimental results show that RG-FinFET exhibits high SET speed of 50ns at 3.4V/RESET speed of 10ns at 2.4V, read time as small as 16ns at 1.1V. Furthermore, excellent 107 cycles endurance and data-retention under 125°C for over one month can be achieved. The array-level performance is also analyzed, showing well disturbance-immune during SET, RESET and read. Secondly, a TRNG was developed based on the drain current variation of RG-FinFET. In terms of the security, this TRNG exhibits ideal un-biased normal distribution of hamming distance, and narrow distribution of hamming weight. Moreover, we introduced the concept of XNOR-enhanced operation to TRNG at high temperature to enhance its uniformity. In NIST test, this TRNG passed all items. More importantly, this work is ready for an embedded FinFET technology to develop TRNG with full logic CMOS compatibility.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39.3.1-39.3.4
ISBN (Electronic)9781728188881
DOIs
StatePublished - 12 Dec 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 12 Dec 202018 Dec 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/TerritoryUnited States
CityVirtual, San Francisco
Period12/12/2018/12/20

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