Abstract
Nonlinear behavior of low-temperature-grown GaAs based metal-semiconductor-metal traveling-wave-photodetector (MSM TWPD) under telecommunication wavelength excitation was discussed. Cr4+:forsterite and Ti:sapphire lasers operating at 1230 nm and 800 nm were used as the light sources for the transient electro-optic sampling measurements. Results at long wavelength showed serious broadening in traces with increased pumping power.
Original language | English |
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Pages | 350-351 |
Number of pages | 2 |
State | Published - 2002 |
Event | Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States Duration: 19 May 2002 → 24 May 2002 |
Conference
Conference | Conference on Lasers and Electro-Optics (CLEO 2002) |
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Country/Territory | United States |
City | Long Beach, CA |
Period | 19/05/02 → 24/05/02 |