Nonlinear behavior of low-temperature-grown GaAs based metal-semiconductor-metal traveling-wave-photodetector (MSM TWPD) under telecommunication wavelength excitation was discussed. Cr4+:forsterite and Ti:sapphire lasers operating at 1230 nm and 800 nm were used as the light sources for the transient electro-optic sampling measurements. Results at long wavelength showed serious broadening in traces with increased pumping power.
|Number of pages||2|
|State||Published - 2002|
|Event||Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States|
Duration: 19 May 2002 → 24 May 2002
|Conference||Conference on Lasers and Electro-Optics (CLEO 2002)|
|City||Long Beach, CA|
|Period||19/05/02 → 24/05/02|