Nonlinear behaviors of LTG-GaAs based MSM TWPDs under telecommunication wavelength excitation

Jin Wei Shi, Kian Giap Gan, Yen Hung Chen, Yi Jen Chiu, John E. Bowers, Chi Kuang Sun

Research output: Contribution to conferencePaperpeer-review

Abstract

Nonlinear behavior of low-temperature-grown GaAs based metal-semiconductor-metal traveling-wave-photodetector (MSM TWPD) under telecommunication wavelength excitation was discussed. Cr4+:forsterite and Ti:sapphire lasers operating at 1230 nm and 800 nm were used as the light sources for the transient electro-optic sampling measurements. Results at long wavelength showed serious broadening in traces with increased pumping power.

Original languageEnglish
Pages350-351
Number of pages2
StatePublished - 2002
EventConference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States
Duration: 19 May 200224 May 2002

Conference

ConferenceConference on Lasers and Electro-Optics (CLEO 2002)
Country/TerritoryUnited States
CityLong Beach, CA
Period19/05/0224/05/02

Fingerprint

Dive into the research topics of 'Nonlinear behaviors of LTG-GaAs based MSM TWPDs under telecommunication wavelength excitation'. Together they form a unique fingerprint.

Cite this