Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-μm Telecommunication Wavelength

Jin Wei Shi; Yen Hung Chen; Kian Giap Gan; Yi Jen Chiu; John E. Bowers; Ming Chun Tien; Tzu Ming Liu; Chi Kuang Sun

doi:10.1109/LPT.2003.819418

Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-μm Telecommunication Wavelength

Jin Wei Shi
, Yen Hung Chen
, Kian Giap Gan
, Yi Jen Chiu
, John E. Bowers
, Ming Chun Tien
, Tzu Ming Liu
, Chi Kuang Sun

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to "hot electron" effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.

Original language	English
Pages (from-to)	242-244
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2003.819418
State	Published - Jan 2004

Keywords

Bandwidth saturation
Metal-semiconductor-metal (MSM) devices
Photodetector
Traveling wave devices

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10.1109/LPT.2003.819418

Cite this

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title = "Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-μm Telecommunication Wavelength",

abstract = "We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to {"}hot electron{"} effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.",

keywords = "Bandwidth saturation, Metal-semiconductor-metal (MSM) devices, Photodetector, Traveling wave devices",

author = "Shi, \{Jin Wei\} and Chen, \{Yen Hung\} and Gan, \{Kian Giap\} and Chiu, \{Yi Jen\} and Bowers, \{John E.\} and Tien, \{Ming Chun\} and Liu, \{Tzu Ming\} and Sun, \{Chi Kuang\}",

note = "Funding Information: Manuscript received April 28, 2003; revised July 18, 2003. This work was supported by the National Science Council and Institute of Applied Science and Engineering Research, Academia Sinica, Taiwan, R.O.C.",

year = "2004",

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doi = "10.1109/LPT.2003.819418",

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journal = "IEEE Photonics Technology Letters",

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T1 - Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-μm Telecommunication Wavelength

AU - Shi, Jin Wei

AU - Chen, Yen Hung

AU - Gan, Kian Giap

AU - Chiu, Yi Jen

AU - Bowers, John E.

AU - Tien, Ming Chun

AU - Liu, Tzu Ming

AU - Sun, Chi Kuang

N1 - Funding Information: Manuscript received April 28, 2003; revised July 18, 2003. This work was supported by the National Science Council and Institute of Applied Science and Engineering Research, Academia Sinica, Taiwan, R.O.C.

PY - 2004/1

Y1 - 2004/1

N2 - We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to "hot electron" effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.

AB - We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to "hot electron" effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.

KW - Bandwidth saturation

KW - Metal-semiconductor-metal (MSM) devices

KW - Photodetector

KW - Traveling wave devices

UR - https://www.scopus.com/pages/publications/1642463019

U2 - 10.1109/LPT.2003.819418

DO - 10.1109/LPT.2003.819418

M3 - 期刊論文

AN - SCOPUS:1642463019

SN - 1041-1135

VL - 16

SP - 242

EP - 244

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 1

ER -

Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-μm Telecommunication Wavelength

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Keywords

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