Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (∼1.3μm)

Jin Wei Shi, Kian Giap Gan, John E. Bowers, Tzu Ming Liu, Chi Kuang Sun, Yi Jen Chiu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We observed distinct nonlinear behaviors of bandwidth degradation in low-temperature-grown-GaAs based traveling-wave-photodetectors under long wavelength (∼1300nm) operation. The disclosed unique material properties of LTG-GaAs at different excitation wavelengths are important for its applications in ultrafast optoelectronic and understanding its carrier dynamics in the defect states.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
Subtitle of host publicationPhotonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages406
Number of pages1
ISBN (Electronic)0780377664
DOIs
StatePublished - 2003
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
Duration: 15 Dec 200319 Dec 2003

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume2

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
Country/TerritoryTaiwan
CityTaipei
Period15/12/0319/12/03

Fingerprint

Dive into the research topics of 'Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (∼1.3μm)'. Together they form a unique fingerprint.

Cite this