Abstract
We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to "hot electron" effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.
Original language | English |
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Pages (from-to) | 242-244 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 16 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2004 |
Keywords
- Bandwidth saturation
- Metal-semiconductor-metal (MSM) devices
- Photodetector
- Traveling wave devices