Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-μm Telecommunication Wavelength

Jin Wei Shi, Yen Hung Chen, Kian Giap Gan, Yi Jen Chiu, John E. Bowers, Ming Chun Tien, Tzu Ming Liu, Chi Kuang Sun

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to "hot electron" effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.

Original languageEnglish
Pages (from-to)242-244
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number1
DOIs
StatePublished - Jan 2004

Keywords

  • Bandwidth saturation
  • Metal-semiconductor-metal (MSM) devices
  • Photodetector
  • Traveling wave devices

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