Non-destructive testing method for chip warpage -Applications of synchrotron radiation X-ray

Hsueh Hsien Hsu, Chang Meng Wang, Hsin Yi Lee, Albert T. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Warpage has become a very critical reliability problem for the advanced electronic packaging technique. One or more chips are stacked on the substrates for a device. The device thus contains materials that have different physical properties. The most prominent problem would be the differences in the thermal expansion coefficient for these materials. During fabrication, thermal energy was applied to the chips; the expansion of these materials would induce thermal stress and warpage on the chips that would be harmful to the long-term reliability. When a current is applied to the device, the Joule heating may further enhance the warpage of the chips. Si-on-Si interposer samples are introduced to minimize the issue. It is important to develop a quick and non-destructive method to insitu analyze the warpage level at different conditions. Synchrotron radiation X-ray is used for measuring the strain and the warpage of the Si dies.

Original languageEnglish
Title of host publication2016 International Conference on Electronics Packaging, ICEP 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15-18
Number of pages4
ISBN (Electronic)9784904090176
DOIs
StatePublished - 7 Jun 2016
Event2016 International Conference on Electronics Packaging, ICEP 2016 - Hokkaido, Japan
Duration: 20 Apr 201622 Apr 2016

Publication series

Name2016 International Conference on Electronics Packaging, ICEP 2016

Conference

Conference2016 International Conference on Electronics Packaging, ICEP 2016
Country/TerritoryJapan
CityHokkaido
Period20/04/1622/04/16

Keywords

  • Si-on-Si interposer
  • Synchrotron radiation X-ray
  • Warpage

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