Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs

Chih Chan Hu, Yue Ming Hsin, Dong Ming Lin, Chien Chang Huang, Cheng Kuo Lin, Yu Chi Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, we compare the noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs in the frequency range of 1 to 18 GHz. The studied devices including dual-gate enhancement-/enhancement-mode (E/E-mode) and enhancement-/depletion-mode (E/D-mode) pHEMTs were fabricated on the same wafer by the different gate metallization. The minimum noise figure (NFmin) and associated gain (GA) are discussed with power and linearity performance at the same bias conditions. The dual-gate E/E- and E/D-mode devices have demonstrated low noise and high gain performance, and are equivalent to the cascode configuration for compact size as compared to a cascode low noise amplifier.

Original languageEnglish
Title of host publicationProceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Pages212-215
Number of pages4
DOIs
StatePublished - 2011
Event21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada
Duration: 12 Jun 201116 Jun 2011

Publication series

NameProceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Conference

Conference21st International Conference on Noise and Fluctuations, ICNF 2011
Country/TerritoryCanada
CityToronto, ON
Period12/06/1116/06/11

Keywords

  • associated gain
  • depletion-mode
  • dual-gate
  • enhancement-mode
  • low noise amplifier
  • minimum noise figure

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