NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

Yu Chen Chen, Kuo Yu Hsiang, Ying Tsan Tang, Min Hung Lee, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we have conducted an NLS-based Monte-Carlo modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO). With the coexistence of orthorhombic-phase (FE) and tetragonal-phase (AFE) grains and the crucial consideration of back-switching field, our generalized NLS model is capable of describing the switching dynamics and frequency response of AFE/FE HZO. Our experimentally verified model is adequate for modeling HZO with certain AFE and FE properties, which can be beneficial to future memory applications and neuromorphic computing.

Original languageEnglish
Title of host publication2021 IEEE International Electron Devices Meeting, IEDM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15.4.1-15.4.4
ISBN (Electronic)9781665425728
DOIs
StatePublished - 2021
Event2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
Duration: 11 Dec 202116 Dec 2021

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2021-December
ISSN (Print)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/TerritoryUnited States
CitySan Francisco
Period11/12/2116/12/21

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