Ni silicide formation on epitaxial Si1 - YCy/(001) layers

S. W. Lee; S. H. Huang; S. L. Cheng; P. S. Chen; W. W. Wu

doi:10.1016/j.tsf.2010.05.015

Ni silicide formation on epitaxial Si_{1 - Y}C_y/(001) layers

S. W. Lee, S. H. Huang, S. L. Cheng, P. S. Chen, W. W. Wu

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The formation of Ni silicides on Si_{1 - y}C_y (y = 0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si _0.982C_0.018 samples, the process window of NiSi was shifted and extended to 450-700 °C. Moreover, there was an additional strain introduced into the Si_{1 - y}C_y epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si _1yC_y for device applications.

Original language	English
Pages (from-to)	7394-7397
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2010.05.015
State	Published - 1 Oct 2010

Keywords

Sheet resistance
Silicide
Thermal stability

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10.1016/j.tsf.2010.05.015

Cite this

@article{b25a341a97be49c48be299ec01abecae,

title = "Ni silicide formation on epitaxial Si1 - YCy/(001) layers",

abstract = "The formation of Ni silicides on Si1 - yCy (y = 0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si 0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 °C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si 1yCy for device applications.",

keywords = "Sheet resistance, Silicide, Thermal stability",

author = "Lee, {S. W.} and Huang, {S. H.} and Cheng, {S. L.} and Chen, {P. S.} and Wu, {W. W.}",

note = "Funding Information: The research is supported by the National Nano Device Laboratories and the National Science Council of Taiwan under contract no. NSC 97-2221-E-008-091-MY3 .",

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T1 - Ni silicide formation on epitaxial Si1 - YCy/(001) layers

AU - Lee, S. W.

AU - Huang, S. H.

AU - Cheng, S. L.

AU - Chen, P. S.

AU - Wu, W. W.

N1 - Funding Information: The research is supported by the National Nano Device Laboratories and the National Science Council of Taiwan under contract no. NSC 97-2221-E-008-091-MY3 .

PY - 2010/10/1

Y1 - 2010/10/1

N2 - The formation of Ni silicides on Si1 - yCy (y = 0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si 0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 °C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si 1yCy for device applications.

AB - The formation of Ni silicides on Si1 - yCy (y = 0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si 0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 °C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si 1yCy for device applications.

KW - Sheet resistance

KW - Silicide

KW - Thermal stability

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U2 - 10.1016/j.tsf.2010.05.015

DO - 10.1016/j.tsf.2010.05.015

M3 - 期刊論文

AN - SCOPUS:77956874136

SN - 0040-6090

VL - 518

SP - 7394

EP - 7397

JO - Thin Solid Films

JF - Thin Solid Films

IS - 24