Ni silicide formation on epitaxial Si1 - YCy/(001) layers

S. W. Lee, S. H. Huang, S. L. Cheng, P. S. Chen, W. W. Wu

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


The formation of Ni silicides on Si1 - yCy (y = 0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si 0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 °C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si 1yCy for device applications.

Original languageEnglish
Pages (from-to)7394-7397
Number of pages4
JournalThin Solid Films
Issue number24
StatePublished - 1 Oct 2010


  • Sheet resistance
  • Silicide
  • Thermal stability


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