New observations on the physical mechanism of Vth-variation in nanoscale CMOS devices after long term stress

E. R. Hsieh, Steve S. Chung, C. H. Tsai, R. M. Huang, C. T. Tsai, C. W. Liang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

A new effect, called random trap fluctuation(RTF), is proposed to study the impact of hot carrier stress on the device variability. It was found that not only the popular random dopant fluctuation (RDF), but also the traps, caused by the HC stress or FN-stress, induce the Vth variation. After the FN stress, it was found that Vth variation is worse in pMOSFETs due to stress-induced interface traps. While, under the HC stress, different V th variations were found for nMOSFETs and pMOSFETs. The V th variation is enhanced in pMOSFETs due to RTF and reduced in nMOSFET as a result of the Trap Blocking Effect (TBE). RTF in pMOSFET might be the dominant factor of CMOS reliability for future generations.

Original languageEnglish
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
PagesXT.9.1-XT.9.2
DOIs
StatePublished - 2011
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: 10 Apr 201114 Apr 2011

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference49th International Reliability Physics Symposium, IRPS 2011
Country/TerritoryUnited States
CityMonterey, CA
Period10/04/1114/04/11

Keywords

  • hot carrier effect
  • random dopant fluctuation
  • random trap fluctuation

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