@inproceedings{96257344eb1d4b5bac4d2da029539e82,
title = "New observation of an abnormal leakage current in advanced CMOS devices with short channel lengths down to 50nm and beyond",
abstract = "In this work, for the first time, an abnormal leakage current has been observed in MOSFET with 50nm channel length and beyond. This effect shows that, in an ultra-short channel MOSFET, sub-threshold swing (SS) and Ioff are decreased for back-biased nMOSFET and pMOSFET. This effect is attributed to the BJT-induced current from the source to the drain. An experimental approach has been used to verify the existence of this BJT current component. As a consequence, this BJT current can be reduced with appropriate control of the SID-to-substrate junction. As an application of the approach to advanced embedded-SiC MOSFET with various splits, it was found that a higher band-offset of SID-to-substrate junction will give rise to a larger the BJT ballistic transport current. This provides us important information on reducing the leakage current for advanced CMOS with 50nm and beyond.",
author = "Hsieh, {E. R.} and Chung, {Steve S.} and Lin, {Y. H.} and Tsai, {C. H.} and Liu, {P. W.} and Tsai, {C. T.} and Ma, {G. H.} and Chien, {S. C.} and Sun, {S. W.}",
year = "2008",
doi = "10.1109/SNW.2008.5418486",
language = "???core.languages.en_GB???",
isbn = "9781424420711",
series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",
booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",
note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",
}