New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices

E. R. Hsieh, Steve S. Chung, J. C. Wang, C. S. Lai, C. H. Tsai, R. M. Huang, C. T. Tsai, C. W. Liang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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