New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices

E. R. Hsieh; Steve S. Chung; J. C. Wang; C. S. Lai; C. H. Tsai; R. M. Huang; C. T. Tsai; C. W. Liang

doi:10.1109/VLSI-TSA.2012.6210148

New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices

E. R. Hsieh, Steve S. Chung, J. C. Wang, C. S. Lai, C. H. Tsai, R. M. Huang, C. T. Tsai, C. W. Liang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we have studied the I _d variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear I _d variation comes from the mobility scattering; while in saturation region, the I _d variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation I _d variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.

Original language	English
Title of host publication	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VLSI-TSA.2012.6210148
State	Published - 2012
Event	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan Duration: 23 Apr 2012 → 25 Apr 2012

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Conference

Conference	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
Country/Territory	Taiwan
City	Hsinchu
Period	23/04/12 → 25/04/12

Access to Document

10.1109/VLSI-TSA.2012.6210148

Cite this

Hsieh, E. R., Chung, S. S., Wang, J. C., Lai, C. S., Tsai, C. H., Huang, R. M., Tsai, C. T., & Liang, C. W. (2012). New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers Article 6210148 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VLSI-TSA.2012.6210148

Hsieh, E. R. ; Chung, Steve S. ; Wang, J. C. et al. / New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices. 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{86a08e1d9b794b2ea4ca5e5dca04bb12,

title = "New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices",

abstract = "In this paper, we have studied the I d variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear I d variation comes from the mobility scattering; while in saturation region, the I d variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation I d variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.",

author = "Hsieh, {E. R.} and Chung, {Steve S.} and Wang, {J. C.} and Lai, {C. S.} and Tsai, {C. H.} and Huang, {R. M.} and Tsai, {C. T.} and Liang, {C. W.}",

year = "2012",

doi = "10.1109/VLSI-TSA.2012.6210148",

language = "???core.languages.en_GB???",

isbn = "9781457720840",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers",

note = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 ; Conference date: 23-04-2012 Through 25-04-2012",

}

Hsieh, ER, Chung, SS, Wang, JC, Lai, CS, Tsai, CH, Huang, RM, Tsai, CT & Liang, CW 2012, New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices. in 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers., 6210148, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012, Hsinchu, Taiwan, 23/04/12. https://doi.org/10.1109/VLSI-TSA.2012.6210148

New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices. / Hsieh, E. R.; Chung, Steve S.; Wang, J. C. et al.
2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210148 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices

AU - Hsieh, E. R.

AU - Chung, Steve S.

AU - Wang, J. C.

AU - Lai, C. S.

AU - Tsai, C. H.

AU - Huang, R. M.

AU - Tsai, C. T.

AU - Liang, C. W.

PY - 2012

Y1 - 2012

N2 - In this paper, we have studied the I d variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear I d variation comes from the mobility scattering; while in saturation region, the I d variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation I d variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.

AB - In this paper, we have studied the I d variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear I d variation comes from the mobility scattering; while in saturation region, the I d variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation I d variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.

UR - http://www.scopus.com/inward/record.url?scp=84863691670&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2012.6210148

DO - 10.1109/VLSI-TSA.2012.6210148

M3 - 會議論文篇章

AN - SCOPUS:84863691670

SN - 9781457720840

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers

T2 - 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012

Y2 - 23 April 2012 through 25 April 2012

ER -

Hsieh ER, Chung SS, Wang JC, Lai CS, Tsai CH, Huang RM et al. New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210148. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VLSI-TSA.2012.6210148

New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices

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