This paper presents a network model for a-Si TFT two-dimensional numerical simulation. The Poisson's and continuity equations are formulated into equivalent circuits so circuit elements such as voltage sources, resistors and capacitances can be used to implement the equations. Numerical simulation is a powerful tool for device research, but sometimes it is hard to implement. This method not only provides the availability to simulate semiconductor devices numerically by using circuit simulator, but also reduce the complexity of numerical simulation. In addition, using this method makes mixed-mode simulation between semiconductor device and external circuits very easy. The simulation results which includes i-v, c-v and transient characteristics are all reasonable and satisfactory.
|Number of pages||4|
|State||Published - 1997|
|Event||Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong|
Duration: 30 Aug 1997 → 30 Aug 1997
|Conference||Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting|
|City||Hong Kong, Hong Kong|
|Period||30/08/97 → 30/08/97|