Near-ballistic uni-traveling-carrier photodiode-based V-band optoelectronic mixers with internal up-conversion-gain, wide modulation bandwidth, and very high operation current performance

J. W. Shi, Y. S. Wu, Y. S. Lin

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We construct a high-performance optoelectronic mixer by integrating a near-ballistic uni-traveling-carrier photodiode with a V-band (50-75 GHz) coplanar-waveguide-based bandpass filter. The demonstrated device shows an improvement in the V-band output radio-frequency (RF) power and conversion loss of around 3 and 10 dB, respectively, over that of the control device, which does not have such an integrated filter. The strong nonlinearity of the ballistic-transport of the electrons in the active device, and the excellent RF performance of the integrated filter help us to achieve an internal-conversion gain of around 1 dB, from the low to very high optical injected local-oscillator power (20.6 dBm), which corresponds to an approximately 17-mA high-output photocurrent, and very wide up-conversion bandwidth (>15 GHz) at the V-band.

Original languageEnglish
Pages (from-to)939-941
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number11
DOIs
StatePublished - 1 Jun 2008

Keywords

  • High-power photodiodes (PDs)
  • Optoelectronic mixer

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