TY - JOUR
T1 - Near-ballistic uni-traveling-carrier photodiode-based V-band optoelectronic mixers with internal up-conversion-gain, wide modulation bandwidth, and very high operation current performance
AU - Shi, J. W.
AU - Wu, Y. S.
AU - Lin, Y. S.
N1 - Funding Information:
Manuscript received January 9, 2008; revised February 21, 2008. This work was supported by the National Science Council of Taiwan under Grant NSC-96-2221-E-008-121-MY3. The authors are with the Department of Electrical Engineering, National Central University, Taoyuan County, 320, Taiwan, R.O.C. (e-mail: [email protected]. edu.tw). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2008.922913 Fig. 1. (a) Front top view and (b) conceptual cross-sectional view of the NBUTC-PD. (c) Top view of Device A (with integrated filter) and Device B (with integrated CPW lines). The scale in (c) is also given for reference.
PY - 2008/6/1
Y1 - 2008/6/1
N2 - We construct a high-performance optoelectronic mixer by integrating a near-ballistic uni-traveling-carrier photodiode with a V-band (50-75 GHz) coplanar-waveguide-based bandpass filter. The demonstrated device shows an improvement in the V-band output radio-frequency (RF) power and conversion loss of around 3 and 10 dB, respectively, over that of the control device, which does not have such an integrated filter. The strong nonlinearity of the ballistic-transport of the electrons in the active device, and the excellent RF performance of the integrated filter help us to achieve an internal-conversion gain of around 1 dB, from the low to very high optical injected local-oscillator power (20.6 dBm), which corresponds to an approximately 17-mA high-output photocurrent, and very wide up-conversion bandwidth (>15 GHz) at the V-band.
AB - We construct a high-performance optoelectronic mixer by integrating a near-ballistic uni-traveling-carrier photodiode with a V-band (50-75 GHz) coplanar-waveguide-based bandpass filter. The demonstrated device shows an improvement in the V-band output radio-frequency (RF) power and conversion loss of around 3 and 10 dB, respectively, over that of the control device, which does not have such an integrated filter. The strong nonlinearity of the ballistic-transport of the electrons in the active device, and the excellent RF performance of the integrated filter help us to achieve an internal-conversion gain of around 1 dB, from the low to very high optical injected local-oscillator power (20.6 dBm), which corresponds to an approximately 17-mA high-output photocurrent, and very wide up-conversion bandwidth (>15 GHz) at the V-band.
KW - High-power photodiodes (PDs)
KW - Optoelectronic mixer
UR - http://www.scopus.com/inward/record.url?scp=58049173325&partnerID=8YFLogxK
U2 - 10.1109/LPT.2008.922913
DO - 10.1109/LPT.2008.922913
M3 - 期刊論文
AN - SCOPUS:58049173325
SN - 1041-1135
VL - 20
SP - 939
EP - 941
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 11
ER -