@inproceedings{02b70a2fcb624d92b2c5f27699b15d30,
title = "Nanothick layer transfer of hydrogen-implanted wafer using polysilicon sacrificial layer",
abstract = "A fabrication method of 2-D nanostructure materials applied for forming nanothick SOI materials without using post-thinning processes is presented in this paper. The thickness of SOI layer is precisely controlled by a polysilicon layer as a sacrificial layer in the implantation step to acquire a desirable implant depth. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step with 4×1016 /cm-2,160KeV, H2+ ions. The as-implanted wafer was contained a hydrogen-rich buried layer which depth from the top surface is less than 100 nm. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer under 10-minute microwave irradiation after the bonding step. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).",
author = "Huang, \{C. H.\} and Chang, \{C. L.\} and Yang, \{Y. Y.\} and T. Suryasindhu and Liao, \{W. C.\} and Su, \{Y. H.\} and Li, \{P. W.\} and Liu, \{C. Y.\} and Lai, \{C. S.\} and Ting, \{J. H.\} and Chu, \{C. S.\} and Lee, \{C. S.\} and Lee, \{T. H.\}",
year = "2006",
doi = "10.1557/proc-0921-t05-02",
language = "???core.languages.en\_GB???",
isbn = "1558998780",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "84--89",
booktitle = "Nanomanufacturing",
note = "2006 MRS Spring Meeting ; Conference date: 17-04-2006 Through 21-04-2006",
}