Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Yung Chen Cheng, En Chiang Lin, Cheng Ming Wu, C. C. Yang, Jer Ren Yang, Andreas Rosenauer, Kung Jen Ma, Shih Chen Shi, L. C. Chen, Chang Chi Pan, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

The carrier localization and nanostructures behaviors of green-luminescence GaN/InGaN quantum-well (QW) structures of various silicon-doping conditions are discussed. The results of photoluminescence (PL), strain state analysis (SSA), detection-energy-dependent photoluminescence excitation (DEDPLE) and excitation-energy-dependent photoluminescence (EEDPL) of three InGaN/GaN QW samples are compared. The SSA images show weaker composition fluctuations in the undoped and well-doped samples and strongly clustering nanostructures in the barrier-doped sample. As a result of the differences in carrier localization, differences in silicon doping between the samples give rise to the differences in EEDPL and DEDPLE spectra.

Original languageEnglish
Pages (from-to)2506-2508
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number14
DOIs
StatePublished - 5 Apr 2004

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