Nanoscale layer transfer by hydrogen ion-cut processing: A brief review through recent U.S. patents

Keyphrases

• Layer Transfer 100%
• US Patents 100%
• Hydrogen Ion 100%
• Ion-cutting 100%
• Nanoscale Layers 100%
• Sub-100 Nm 60%
• Transfer Techniques 60%
• Silicon Membrane 60%
• Well-defined 40%
• Cut Layer 40%
• Electronic Devices 20%
• Artificial Intelligence 20%
• High Dose 20%
• Insulator 20%
• Materials Technology 20%
• Integrated Circuits 20%
• Ion Implantation 20%
• Wafer Bonding 20%
• Microelectronics 20%
• Photonic Devices 20%
• Industry 4.0 (I4.0) 20%
• Silicon Layer 20%
• Unique Characteristics 20%
• Thinning Process 20%
• Specific Intent 20%
• Plasma Diffusion 20%
• Transfer Technology 20%
• FDSOI 20%
• Layer Splitting 20%
• Material Analysis 20%
• Nanometre 20%
• Smart-cut 20%
• Plasma Immersion Ion Implantation 20%
• Hydrogen Trapping Site 20%
• Chemical Mechanical Polishing 20%
• Thick Silicon 20%
• Hydrogen Implantation 20%
• Semiconductor Nanomembranes 20%
• Peer-reviewed Articles 20%
• Implantation Energy 20%
• Ultrathin Silicon 20%
• Functional Electronics 20%
• Ultra-precision 20%
• Plasma Electrolytic Oxidation 20%
• Semiconductor Membranes 20%

Engineering

• Nanoscale 100%
• Energy Engineering 20%
• Ion Implantation 20%
• Nanometre 20%
• Wafer Bonding 20%
• Review Paper 20%
• Microelectronics 20%
• Material Technology 20%
• Silicon Layer 20%
• Thinning Process 20%
• Photonic Devices 20%
• Chemical Mechanical Polishing 20%
• Implantation Site 20%
• Integrated Circuit 20%
• Artificial Intelligence 20%

Material Science

• Silicon 100%
• Electronic Circuit 20%
• Optical Device 20%
• Ion Implantation 20%
• Chemical Mechanical Planarization 20%
• Materials Engineering 20%