Nanomeshed Pt(Au) transparent contact to p-GaN of light-emitting diode

Xu Feng Li, Cheng Chieh Chang, Yen Shuo Liu, Po Han Chen, Cheng Yi Liu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This study examines nanomeshed Pt and Pt(Au) thin films formed by a dewetting process on a p-GaN surface. With prolonged annealing, the Pt(Au) layer shows more stable contact resistance to p-GaN and lower sheet resistance than the Pt layer. L-I curves show that the GaN light-emitting diode (LED) with the Pt(Au) transparent conducting layer (TCL) produces more light output power than the GaN LED with the Pt TCL. The higher light output of the LED with the Pt(Au) TCL is attributed to the lower sheet resistance, which improves current spreading in the active region.

Original languageEnglish
Pages (from-to)166-169
Number of pages4
JournalJournal of Electronic Materials
Volume43
Issue number1
DOIs
StatePublished - Jan 2014

Keywords

  • Light-emitting diodes
  • Pt thin film
  • dewetting
  • transparent conducting layer

Fingerprint

Dive into the research topics of 'Nanomeshed Pt(Au) transparent contact to p-GaN of light-emitting diode'. Together they form a unique fingerprint.

Cite this