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Nanoelectronics based on fluorinated graphene
K. I. Ho
, C. S. Lai
,
C. Y. Su
Graduate Institute of Energy Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Chapter
›
peer-review
1
Scopus citations
Overview
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Keyphrases
Nanoelectronics
100%
Fluorinated Graphene
100%
Fluorographene
100%
Graphene
66%
Physical Properties
33%
Band Gap
33%
Layered Structure
33%
Semiconductors
33%
Insulator
33%
Graphene Surface
33%
Optical Band Gap
33%
Surface Chemistry
33%
Chemical Properties
33%
Material Properties
33%
Plasma-assisted
33%
Atomic Ratio
33%
Stoichiometry
33%
Metal-semiconductor-metal
33%
Electrical Characteristics
33%
Atomic Layers
33%
Fluorine Atom
33%
Tunable Electronic Structures
33%
Tunable Electrical Conductivity
33%
Fluorination Process
33%
Wide Band Gap Semiconductors
33%
Metal-insulator
33%
Material Science
Graphene
100%
Surface (Surface Science)
33%
Electrical Conductivity
16%
Chemical Property
16%
Physical Property
16%
Wide Band Gap Semiconductor
16%
Materials Property
16%