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Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION

  • C. J. Su
  • , Y. T. Tang
  • , Y. C. Tsou
  • , P. J. Sung
  • , F. J. Hou
  • , C. J. Wang
  • , S. T. Chung
  • , C. Y. Hsieh
  • , Y. S. Yeh
  • , F. K. Hsueh
  • , K. H. Kao
  • , S. S. Chuang
  • , C. T. Wu
  • , T. Y. You
  • , Y. L. Jian
  • , T. H. Chou
  • , Y. L. Shen
  • , B. Y. Chen
  • , G. L. Luo
  • , T. C. Hong
    • K. P. Huang, M. C. Chen, Y. J. Lee, T. S. Chao, T. Y. Tseng, W. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

38 Scopus citations

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