Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION

C. J. Su, Y. T. Tang, Y. C. Tsou, P. J. Sung, F. J. Hou, C. J. Wang, S. T. Chung, C. Y. Hsieh, Y. S. Yeh, F. K. Hsueh, K. H. Kao, S. S. Chuang, C. T. Wu, T. Y. You, Y. L. Jian, T. H. Chou, Y. L. Shen, B. Y. Chen, G. L. Luo, T. C. HongK. P. Huang, M. C. Chen, Y. J. Lee, T. S. Chao, T. Y. Tseng, W. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

30 Scopus citations

Fingerprint

Dive into the research topics of 'Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION'. Together they form a unique fingerprint.

Keyphrases

Engineering

Material Science