Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures

Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, C. C. Yang, Ming Hua Mao, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

Based on wavelength-dependent and temperature-varying time-resolved photoluminescence (PL) measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in an InGaN/GaN quantum well structure was proposed for interpreting the early-stage fast decay, delayed slow rise, and extended slow decay of PL intensity. The process of carrier transport was enhanced with a certain amount of thermal energy for overcoming potential barriers between spatially distributed potential minimums. With carrier supply in the carrier transport process, the extended PL decay time at wavelengths corresponding to deeply localized states can be as large as 80 ns.

Original languageEnglish
Pages (from-to)4375-4377
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number23
DOIs
StatePublished - 10 Jun 2002

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