@inproceedings{48b37e2172464c3f95e269718e41cb6e,
title = "Multi-peak negative differential resistance arising from tunneling current through few germanium quantum dots",
abstract = "Metal-oxide-silicon (MOS) capacitors incorporating 2 ∼ 3 germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated to exhibit multi-peak negative differential resistance (NDR) for multiple-value memories and logics. The tunneling current through the Ge-QD MOS capacitors is theoretically and experimentally studied. We found that negative differential resistance (NDR) arises from the interdot Coulomb interactions and the QDs with shell-filling conditions. The experimental results qualitatively match with theoretical prediction.",
author = "Lai, {W. T.} and Chen, {G. H.} and Kuo, {David M.T.} and Li, {P. W.}",
year = "2008",
doi = "10.1109/SNW.2008.5418431",
language = "???core.languages.en_GB???",
isbn = "9781424420711",
series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",
booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",
note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",
}